10
RF Device Data
Freescale Semiconductor
MRF1518NT1
TYPICAL CHARACTERISTICS, 135 - 175 MHz
155 MHz
01215 112
3
4106
7
8
9
Pout, OUTPUT POWER (WATTS)
50
0
80
Eff, DRAIN EFFICIENCY (%)
30
60
40
Eff, DRAIN EFFICIENCY (%)
Figure 31. Gain versus Output Power
Pout, OUTPUT POWER (WATTS)
9
7
17
Figure 32. Drain Efficiency versus Output
Power
2
GAIN (dB)
0
Figure 33. Output Power versus
Biasing Current
12
IDQ, BIASING CURRENT (mA)
0
Figure 34. Drain Efficiency versus
Biasing Current
70
IDQ, BIASING CURRENT (mA)
45
Figure 35. Output Power versus
Supply Voltage
2
8
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 36. Drain Efficiency versus
Supply Voltage
VDD, SUPPLY VOLTAGE (VOLTS)
30
91610 1511
14
8
10 14 1511 13 1612
9
13
0
40
60
60
30
800 800400
0
7
12
600 1000
80
2
6
4
11
19
200
50
4
15
P
out
, OUTPUT POWER (WATTS)
200 1000400 600
P
out
, OUTPUT POWER (WATTS)
12
3
1
65
55
3
6
4
5
Eff, DRAIN EFFICIENCY (%)
50
70
35
155 MHz
135 MHz
175 MHz
20
10
135 MHz
175 MHz
155 MHz
135 MHz
175 MHz
155 MHz
135 MHz
175 MHz
155 MHz
135 MHz
175 MHz
155 MHz
135 MHz
175 MHz
VDD
= 12.5 Vdc
Pin
= 24.5 dBm
IDQ
= 150 mA
Pin
= 24.5 dBm
VDD
= 12.5 Vdc
Pin
= 24.5 dBm
IDQ
= 150 mA
Pin
= 24.5 dBm
687
9
10 1211
5
13
70
10
8
40
35
11
10
8
9
45
65
55
75
VDD
= 12.5 Vdc
VDD
= 12.5 Vdc
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